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| 008 | 100615s2010 nyua b 001 0 eng | ||
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_a015478365 _2Uk |
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_a9780071635196 : _c125.00 |
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_aTK7871.99.M44 _bK84 2010 |
| 090 | _aTK 7871.99 .M44 K84 2010 | ||
| 100 | 1 |
_aKundu, Sandip. _967250 |
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| 245 | 1 | 0 |
_aNanoscale CMOS VLSI circuits : _bdesign for manufacturability / _cSandip Kundu, Aswin Sreedhar. |
| 246 | 1 | 4 | _aNanoscale complementary metal oxide semiconductor very large-scale integration circuits |
| 260 |
_aNew York : _bMcGraw-Hill, _cc2010. |
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| 300 |
_axv, 296 p. : _bill. ; _c24 cm. |
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| 336 |
_2rdacontent _atext _btxt |
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| 337 |
_2rdamedia _aunmediated _bn |
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| 338 |
_2rdacarrier _avolume _bnc |
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| 504 | _aIncludes bibliographical references and index. | ||
| 505 | 0 | _aSemiconductor manufacturing -- Process and device variability : analysis and modeling -- Manufacturing-aware physical design closure -- Metrology, manufacturing defects, and defect extraction -- Defect impact modeling and yield improvement techniques -- Physical design and reliability -- Design for manufacturability : tools and methodologies. | |
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_aMetal oxide semiconductors, Complementary _xDesign and construction. _980856 |
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| 650 | 0 |
_aIntegrated circuits _xVery large scale integration _xDesign and construction. _9154904 |
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| 650 | 0 |
_aNanoelectronics. _9111626 |
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_aSreedhar, Aswin. _9154905 |
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